In Ⅲ - Ⅴ compound semiconductors, the most widely used material in communications products is gallium arsenide (GaAs), therefore, high-frequency GaAs can meet the requirements of high-speed communication device characteristics. Because of the rapid development in the communications industry and also communication device that trend to be lighter, thinner, shorter and smaller, GaAs technology become more important. Our main products as epitaxial GaAs substrate to the microelectronic components; heterojunction bipolar transistor (HBT) wafer and pseudomorphic high electron mobility transistor (PHEMT) wafer.