GaAs PD epi Wafer
Because of the following superior properties of GaAs Semiconductors:  
Good O/E Transfer Efficiency
Low Dark Current
High Electron Mobility
High Speed and High Frequency Response.
GaAs material has become a good choice of photo detectors (PD diode), since GaAs bandgap is in alignment with short range optical fiber communication with wavelength of 850nm. Thus GaAs PD photo detectors can combine with active device VCSEL as the key component for short range optical fiber communication applications.
Based on MOCVD epi growth core technology, VPEC creates state of the art GaAs PD epi wafer for short range optical fiber communication applications. The wafer has extremely low background concentration and excellent uniformity in the undoped GaAs absorption layer, VPEC’s GaAs PIN epitaxial wafers are popular among most of the key GaAs PIN manufacturers worldwide because of its superior product performance and reliability. VPEC maintains excellent mass production quality and consistency through its strict quality control system.
Optical Fiber Communications
RF Switches

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