Company History

Year
Milestone
2023 January Completion of the Sustainability Report and its disclosure for the first time.
  February Passed the Responsible Business Alliance’s (RBA) validation (VAP) for no major defects (over 180 points) in terms of labor, safety and health, the environment, and ethics.
  October Pingzhen Plant and Pingzhen Plant No. 2 completed the 2022 direct and indirect greenhouse gas emission inventory, and obtained the verification certificate (Covering Scope 1-3/Category 1-6).
 2022  February Received the excellent company award for the Regional Joint Defense Drill from Pingjhen Industrial Park Service Center.
 
July In 2021, Pingzhen Plant and Pingzhen Plant II have completed the inspection related to GHG emission directly and indirectly, and obtained the declaration of inspection. 
   November Received the excellent staff award upon participation in the Manufactures United General Association Of Industrial Park Of R.O.C.
 2021  February Passed the VAP of RBA, and free from any priority defects in labor, safety & health, environment and ethics.
   November Received an excellent company award from the Manufactures United General Association Of Industrial Park of R.O.C.
 2018  January Pingzhen Plant II received the factory registration certificate.
   September Pingzhen Plant II passed the Hazardous Work Place Review and Inspection by Occupational Safety and Health Administration and held qualified.
 2016  October Implemented a cash capital reduction of 25% and the paid-in capital after the capital reduction was NTD 1,849,059 thousand. 
 2014  October Obtained the five-year recognition of our performance in the Taiwan Occupational Safety and Health Management System (TOSHMS).
 2013  October Received the excellent safety and health personnel award upon participation in the Safety Partnerships Program of Ministry of Labor.
   November Conducted the greenhouse gas inventory and obtained the ISO-14064-1 verification statement.
   December Completed the construction of Pingzhen Plant II.
 2011  March Obtained the three-year recognition of our performance in the Taiwan Occupational Safety and Health Management System (TOSHMS). 
 2010  September Won the “2010 Technology Innovation Award” from the Department of Technology, MOEA.
 2009  January Sold part of our LED process facilities and patents, with a strategic focus on microelectronics and solar energy products.
   August Named the 2008 Best Supplier by our largest U.S. client. 
   August Passed and obtained the certification of the occupational safety and health management systems (OHSAS and TOSHS).
   November Awarded the “Safety and Health Role Model” by the IDB.
 2008  May Won the bid for the “Multi-junction solar cell” project launched by the Institute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan. 
   September Passed TS16949 certification. 
 2007  February “High-efficiency concentrated multi-junction solar cell epi-wafers” was approved by the IDB for its leading new product development and counseling program.
2006 November Issued the first domestic secured convertible corporate bond in the amount of NT$300 million.
2003 April Established strategic alliances with major clients.
  October Mass-produced and shipped WB LED officially.
2002 January The stock was approved for public listing and was officially listed for trading on January 24.
  October InP HBT was certified by clients.
   November Passed ISO 14000 certification.
 1999  February The leading new product development program of “indium gallium phosphide/gallium arsenide HBT epi-wafer” was approved as in the IDB’s approval letter Gong-(88)-II No. 007130. 
  July Passed ISO9001 certification.
1998 January LED epi-wafers reached a high brightness level.
  February Successfully developed microelectronic HBT epi-wafers and sent samples to clients for use.
  March Successfully developed LED epi-wafers and sent samples to clients for use.
 1997  February Moved into the factory and the office of the Longtan Plant. 
   June The first epitaxy growth system was delivered to the Company from Germany. 
   September Approved as an important technology business by the Industrial Development Bureau (IDB), Ministry of Economic Affairs (MOEA). 
   October

Completed the acceptance of the first epitaxy growth system and began to grow microelectronic epi-wafer. 

Grew the first heterojunction bipolar transistor (HBT) epi-wafer. 

  1996  November

Approved for establishment.

Purchased production and measurement machinery after completion of the evaluation and analysis.

  December

Purchased the plant and the office of the Longtan Plant.


ADD:No.16, Gongye 1st Rd., Pingzhen Industrial Zone, Pingzhen Dist., Taoyuan City 324, Taiwan (R.O.C.)
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