Company History

Year
Milestone
Nov. 1996  
Founded on 26th Nov, 1996 in Tao-Yuan, Taiwan with capital NTD$230 Million.
Oct. 1997
First MOCVD reactor started to grow microelectronic epi-wafers.
Jan. 1998
LED epi-wafers reached the ultra brightness grade.
Feb. 1998
Pilot run of HBT epi-wafers production was successful. HBT sampleswere sent out for customer qualification.
Mar. 1998
LED epi-wafers successfully developed and sample were sent out for customer qualification.
Jan. 1999
HBT pilot production.
Feb. 1999
Received R&D subsidy from the Industrial Development Bureau of Ministry of Economic Affairs for“the InGaP/GaAs Heterojunction Bipolar Transistor epi-wafer”Project.
Jul. 1999
ISO 9001 certificated.
Jan. 2000
Received R&D subsidy from the Industrial Development Bureau of Ministry of Economic Affairs for“the 850nm arsenide aluminum gallium surface to shine the type laser epi technology development”Project.
May. 2000
Ping-Jen factory opening and PHEMT pilot production.
Jun. 2000
HBT officially qualified by industrys leading customer.
Oct. 2000
High power LD epi-wafer involume produced.
Jan. 2002
VPECs shares listed on Taiwan Stock Exchange on 24th Jan., 2002.
Oct. 2002
InP HBT qualified by customer.
Nov. 2002
ISO 14000 Certificated.
Oct. 2003
WB-LED mass production.
Feb. 2007
Received R&D subsidy from the Industrial Development Bureau of Ministry of Economic Affairs for“High Efficiency Concentrated Triple Junctions Solar Cell Epi Wafer”Project
Jun. 2007
Granted US Patent for“Heterojunction bipolar transistor structure”
Nov. 2007
Granted US patent for“High-Brightness Light Emitting Diode Having Reflective Layer”
May. 2008
Gained the bid from the Institute of NuclearEnergy Research for Triple-Junction Solar cell.

Aug. 2009

Awarded "2008 Supply support Award" by USA. Customer.

Nov. 2009

Awarded "2009 Industry Safty Benchmarking Award" by IDB.

Sep. 2010

Awarded "2010 R&D Innovation Award" by DOIT.

 

 


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